MBR830 Search Results

DS30030

Abstract: 4b42
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR8100

Abstract: MBR830 MBR840 MBR850 MBR860 MBR880
Contextual Info: MBR830 thru MBR8100 REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction .108 2.75 ●Guard ring for transient protection .187(4.7) .148(3.8)

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR830

Abstract: MBR835 MBR840 MBR845
Contextual Info: MBR830 thru MBR845 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR830 MBR835 MBR840 MBR845 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC

Contextual Info: SIYU MBR830 MBR860 Schottky Barrier Rectifier Reverse Voltage 30 to 60 V Forward Current Single 4.0 A H I rJEËH 30— 60V JEfôÉJL(J£if )4 .0 A ¡ItfiE Features_ • o High Current Capability • IEft,Ek|#'iS;= Low Forward Voltage Drop

MBR830MFS

Contextual Info: MBR830MFS, NRVB830MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting

MBR8100

Abstract: MBR830 11111V
Contextual Info: BL GALAXY ELECTRICAL MBR830 - - - MBR8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

Contextual Info: MBR830 thru MBR8100 REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction ●Guard ring for transient protection .135 3.44 .103 (2.62) ●Low power loss,high efficiency

MBR830

Abstract: MBR845 MBR850 MBR860 MBR830-MBR860 DS30030
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

MBR830

Abstract: MBR835 MBR840 MBR845
Contextual Info: MBR830 thru MBR845 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR830 MBR835 MBR840 MBR845 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: LITE ON POWER SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR830, 35, 40, 45, 50, 60 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

R845

Abstract: resistance R845 MBR830 MBR860 BR830-M 30-ME
Contextual Info: MBR830 - MBR860 VISHAY 8.0A SCHOTTKY BARRIER RECTIFIER y LITEMZI POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Ir 845

Contextual Info: SIYU R MBR830 . MBR8100 肖特基二极管 Schottky Barrier Rectifier 反向电压 30-100V 正向电流 8.0 A Reverse Voltage 30 to 100 V Forward Current 8.0 A 特征 Features TO-220AC .190 4.83 .140(3.56) .420(10.67) .380(9.65) •大电流承受能力。High Current Capability

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency TO-22QAC Lh High Surge Capability High Current Capability and Low Forward

MBRF830

Contextual Info: GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER FEATURES ITO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

MBR5200

Abstract: MBR30200 MBR30200PT TO-247ad MBR5100 MBR540 2x160 MBR1040CT mbr560 MBR5150
Contextual Info: Schottky Barrier Diodes High Tjm Low IRRM Schottky Barrier Diodes Tj=-65°C~+175°C, Tjm=+175°C Òype VR=V V RRM Electrical Characteristics IR @ VR=VRRM IFAV IFSM 25°C 125°C A m A mA VFmax @ IFM V A Package Style MBR540 40 5,0 175 0,50 33 0,55 5 TO-220AC