MBR10120 Search Results

MBR10120CT

Contextual Info: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

mbr10120

Abstract: MBR10100CL
Contextual Info: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Contextual Info: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR10120 Preliminary DIODE 10A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR10120 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and

Contextual Info: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR10120CT Construction : : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd Prepared on Sep. 17th, 2008

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CL

mbr10120

Contextual Info: MOSPEC MBR10120C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CT

MBR10120CT

Abstract: mbr10120
Contextual Info: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

MBR10120CK

Contextual Info: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

Contextual Info: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical application are in

mbr10120

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

MBR2012

Abstract: mbr10120
Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF