MB85R4M2T Search Results
MB85R4M2T Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MB85R4M2TFN-G-ASE1 | Fujitsu Electronics America | Integrated Circuits (ICs) - Memory - IC FRAM 4M PARALLEL 44TSOP | Original | 654.28KB | |||
MB85R4M2TFN-G-JAE2 | FUJITSU Semiconductor | IC FRAM 4MBIT 44TSOP | Original | 1.13MB |
MB85R4M2T Price and Stock
RAMXEED MB85R4M2TFN-G-ASE1IC FRAM 4MBIT PARALLEL 44TSOP |
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MB85R4M2TFN-G-ASE1 | Tray |
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MB85R4M2TFN-G-ASE1 | 1 |
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RAMXEED MB85R4M2TFN-G-JAE2IC FRAM 4MBIT PAR 44TSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MB85R4M2TFN-G-JAE2 | Tray | 126 |
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MB85R4M2TFN-G-JAE2 | 1,097 |
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MB85R4M2TFN-G-JAE2 | 122 | 3 |
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MB85R4M2TFN-G-JAE2 | Tray | 122 | 0 Weeks, 1 Days | 1 |
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MB85R4M2T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00024-0v01-E Memory FRAM 4 M 256 K x 16 Bit MB85R4M2T DESCRIPTIONS The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process |
Original |
DS501-00024-0v01-E MB85R4M2T MB85R4M2T | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00024-2v0-E Memory FRAM 4 M 256 K x 16 Bit MB85R4M2T DESCRIPTIONS The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process |
Original |
DS501-00024-2v0-E MB85R4M2T MB85R4M2T |