MB85R1001A Search Results

MB85R1001A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85R1001ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP	Original	PDF		16

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RAMXEED MB85R1001ANC-GE1 IC FRAM 1MBIT PARALLEL 48TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R1001ANC-GE1	Tray	470		1	1 $18.99 10 $17.60 100 $16.63 1000 $15.26 10000 $15.26	Buy Now
Mouser Electronics	MB85R1001ANC-GE1		1,328			1 $18.99 10 $17.60 100 $16.04 1000 $15.23 10000 $15.23	Buy Now
FUJITSU Limited MB85R1001ANC-GE1 Fram, 1M, Parallel, 3V, 48Tsop; Memory Type:Fram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:Parallel; Access Time:100Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes \|Fujitsu MB85R1001ANC-GE1
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Newark	MB85R1001ANC-GE1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	MB85R1001ANC-GE1		225			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	MB85R1001ANC-GE1		1,221			1 - 10 - 100 - 1000 - 10000 -	Get Quote
RAMXEED MB85R1001APFCN 1Mbit FRAM x8 parallel TSOP48
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Braemac Americas-Symmetry	MB85R1001APFCN				1	1 $11.08 10 $11.08 100 $11.08 1000 $11.08 10000 $11.08	Buy Now

MB85R1001A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-2v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process	Original	DS501-00003-0v01-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-4v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48)	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-1v0-E MB85R1001A MB85R1001A	PDF