MB85R1001A Search Results

MB85R1001A Datasheets (1)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85R1001ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP	Original	PDF		16

MB85R1001A Price and Stock

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RAMXEED


RAMXEED MB85R1001ANC-GE1 IC FRAM 1MBIT PARALLEL 48TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R1001ANC-GE1	Tray	470		1	1 $23.05 10 $21.36 100 $20.18 1000 $18.53 10000 $18.53	Buy Now
Mouser Electronics ()	MB85R1001ANC-GE1		1,065			1 $23.05 10 $21.36 100 $19.50 1000 $19.00 10000 $19.00	Buy Now
	MB85R1001ANC-GE1		1,055			1 $23.03 10 $21.34 100 $19.48 1000 $19.00 10000 $19.00	Buy Now

MB85R1001A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-2v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process	Original	DS501-00003-0v01-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-4v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48)	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-1v0-E MB85R1001A MB85R1001A	PDF