MB81V4400C Search Results

DS05-10174-3E

Abstract: MB81V4400C-60 MB81V4400C
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10174-3E MEMORY CMOS 1M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB81V4400C-60/-70 CMOS 1,048,576 × 4 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory

MB81V4400C

Contextual Info: CMOS 1,048,576 x 4 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM DRAM thatseontains 4,194,304 memory cells accessible in 4-bit increments. The MB81V4400C features a ‘"fast page” mode^of operation whereby high­

MB81V4400C

Contextual Info: - PRELIM IN ARY- April 1996 Edition 2.1 FUJITSU PRO DUCT PROFILE SHEET MB81V4400C-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

81v4400

Contextual Info: MEMORY CMOS 1M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB81V4400C-60/-70 CMOS 1,048,576 x 4 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB81V4400C features a “fast page” mode of operation whereby high­

Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ April 1996 Edition 2.1 PRODUCT PROFILE SHEET MB81V4400C-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM

Contextual Info: - PRELIMINARY Nov. 1995 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB81V4400C-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM D RAM that contains 4,194,304

74LVT16244

Contextual Info: June 1996 Revision 1.0 DATA SHEET FDC1BV7241- 60/70 (J/T)G-S 8MByte (1M x 72), 3.3V, CMOS DRAM Module - ECC, Buffered General Description The FDC1BV7241-(60/70)(J/T)G-S is a 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, leadless dual-in-line memory module (DIMM) package with JEDEC ECC pinout.

Contextual Info: Revision 1.0 " DATA SHEET FDC1B V 7241- 60/70 (J/T)G -S 8MByte (1Mx72), 3.3V, CMOS DRAM Module - ECC, Buffered General Description The FDC1BV7241 -(60/70)(J/T)G-S is a 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, leadless dual-in-line memory module (DIMM) package with JEDEC ECC pinout.

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

74LVT16244

Contextual Info: May 1996 Revision 1.0 DATA SHEET DM1M1V720- 60/70 (J/T)G-IS 8MByte (1M x 72), 3.3V, CMOS DRAM Module - ECC, Buffered General Description The DM1M1V720-(60/70)(J/T)G-IS is a 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, leadless dual-in-line memory module (DIMM) package with JEDEC ECC pinout.

FPT2 MARKING

Abstract: fpt2
Contextual Info: PR ELIM IN A R Y - - April 1996 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V4400C-60/-70 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page M ode Dynamic RAM The Fujitsu M B81V4400C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304

40F2

Abstract: MB81V4405C-60 MB81V4260S
Contextual Info: DRAM 2 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (W X b) Power Consumption max. (mW) Access Time max. (ns) Cycle Time min. (ns) MB81V4100C-60 60Í15]'1 110 220 ; MB81V4100C-70 70[20]‘1 125 195 i MB81V4100C -60L