MB140 Search Results

MB140

Contextual Info: LITE-ON SEMICONDUCTOR MB140 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF provides higher efficiency and extends

MB140

Abstract: KSHP01
Contextual Info: LITE-ON SEMICONDUCTOR MB140 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT- 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF provides higher efficiency and extends

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: HARRIS SEMICOND SECTOR SflE » HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9140 D, R, H M3DES71 □DMST'ìS bl7 H H A S 2N7316D, 2N7316R 2N7316H December 1992 Radiation Hardened P-Channel Power MOSFETs Package Features

Contextual Info: M 1 B I 4 L - 1 2 IGBT ^i>=L- \^ IGBT MODULE : Features • • High Speed S w itching WEEtt Voltage Drive • • & .< > y 5 9 > X * i-v H U ifi Low Inductance M odule Structure : A p p l i c a ti o n s • * - * S I n v e r t e r • A C , D C -*#-— # 7 > ~ 7