MA6X122 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X122 (MA122) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X122 (MA122) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo

MA6X1220G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1220G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in an c se ed lud

MA122

Abstract: MA6X122
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X122 (MA122) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d • Features 4 5 6 2 0.30+0.10

MA122

Abstract: MA6X122
Contextual Info: Switching Diodes MA6X122 MA122 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X122 (MA122) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 • Absolute Maximum Ratings Ta = 25°C

MA122

Abstract: MA6X122
Contextual Info: Switching Diodes MA6X122 MA122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2

MA6X1220G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1220G Silicon epitaxial planar type For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

MA122

Abstract: MA6X122
Contextual Info: Switching Diodes MA6X122 MA122 Silicon epitaxial planar type Unit : mm 2.8+0.2 –0.3 1 VR 80 V Peak reverse voltage VRM 80 V 1.1+0.2 –0.1 Reverse voltage (DC) 1.1+0.3 –0.1 Unit 0 to 0.1 Rating Average forward 2 (0.65) 3 10° Symbol current*1 6 0.30+0.10

MA6X122

Contextual Info: Switching Diodes MA6X122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA122

Abstract: MA127 MA6X122 MA6X127
Contextual Info: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 2.8+0.2 –0.3 6 5˚ 5 M Di ain sc te on na tin nc ue e/ d 4 • Four isolated elements contained in one package, allowing highdensity mounting

MA122

Abstract: MA127 MA6X122 MA6X127
Contextual Info: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

zener diode SMD marking code 27 4F

Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

M2U Package

Abstract: MA6X122 MA6X127
Contextual Info: Switching Diodes MA6X127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

MA3DF30

Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Contextual Info: 2009 ver. 2 Diode Series %JPEF
4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and