MA2X707 Search Results

103 capacitor

Abstract: MA2X707 marking GC diode
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain

Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

103 capacitor

Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

M2X diode

Abstract: MA3X730
Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1

M2X diode

Abstract: MA3X730 935 schottky diode Diodes MARKING 11 3PIN M2X marking
Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125