MA2Q735 Search Results

Contextual Info: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 30 V is guaranteed • Automatic insertion with the emboss taping is possible

MA2Q735

Abstract: MA735
Contextual Info: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 • Features 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) 2.15 ± 0.3 Parameter 1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C

sine wave generator

Abstract: diode 104 MA2Q735 MA735
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 M Di ain sc te on na tin nc ue e/

MA2Q735

Abstract: MA735
Contextual Info: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 30 V is guaranteed • Automatic insertion with the emboss taping is possible

MA2Q735

Abstract: MA735
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible

MA2Q735

Contextual Info: Schottky Barrier Diodes SBD MA2Q735 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 • Features 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) 2.15 ± 0.3 Parameter 1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible • Reverse voltage VR = 30 V is guaranteed

MA2Q735

Abstract: MA735
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ ue pl d in

SI3016

Contextual Info: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187B November 2001 − Revised September 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

SI3016

Contextual Info: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187B November 2001 − Revised September 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

Si3016

Abstract: diode sod-123 marking code l8 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE
Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BGA PACKAGE thermal resistance

Abstract: sod-123 marking code DV B7 J4 marking code sot 223 SI3016
Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes

sot-89 marking E5

Abstract: Z X C SOT-89-5 matsua tantalum capacitor Schottky Diode SOT-89 E5 sot89 marking 81 SOT89 marking 1x sot-89-5 MA2Q735 XC6373 XC6373A300PR
Contextual Info: Series Low Frequency PWM Controlled, Step-Up DC/DC Converters ◆CMOS Low Power Consumption •Applications ◆Operating Voltage : 0.9V~10.0V ●Cellular phones, pagers ◆Output Voltage Range : 2.0V~7.0V ●Palmtops ●Cameras, video recorders ◆Output Voltage Accuracy : ±2.5%

XC6372A301PR

Contextual Info: XC6371/XC6372 シリーズ JTR0402-005a PWMPWM/PFM 自動切替昇圧 DC/DC コンバータ ☆GreenOperation 対応 •概要 を内蔵

Contextual Info: XC6371/6372/6373 シリーズ JTR0402-001 PWMPWM/PFM 自動切替昇圧 DC/DC コンバータ ☆GO 対応 •概要 Ωスイッチング

Contextual Info: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.

Si3016

Abstract: DQ1 relay dec BLM21B102S H8 SOT-23 bav99 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE n5 s101 transistor Schottky Diode 5V 6A atx 203 relay
Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,

10MC25

Abstract: SI3016
Contextual Info: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187C November 2001 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

Si3016

Abstract: BCP56T1 BLM21B102S TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE TOP MARKING C1 ROHM sot23-4 marking a1
Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,