MA2J728 Search Results

MA2J728

Contextual Info: Schottky Barrier Diodes SBD MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.16+0.1

MA2J728

Abstract: MA728 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J7280G Silicon epitaxial planar type For super high speed switching For wave detection • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode 2: Cathode

MA2J7280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J7280G Silicon epitaxial planar type For super high speed switching For wave detection • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

MA2J728

Abstract: MA728
Contextual Info: Schottky Barrier Diodes SBD MA2J728 (MA728) Silicon epitaxial planar type Unit : mm A • Features 0.3 0.5 ± 0.1 0.625 K 1 2 0.7 ± 0.1 + 0.1 0.16 − 0.06 • Sealed in the S-mini (2-pin) mold and super small type • Low forward rise voltage (VF) and satisfactory wave detection

MA2J728

Abstract: MA728 SKH00014AED
Contextual Info: Schottky Barrier Diodes SBD MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Symbol Rating Unit VR 30 V Peak reverse voltage VRM 30 V Peak forward current

MA2J728

Abstract: MA728 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.16+0.1

MARKING 103

Abstract: SC-76 MA2J728 MA728
Contextual Info: Schottky Barrier Diodes SBD MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.16+0.1 –0.06 5˚ Symbol Rating Unit VR 30 V Maximum peak reverse voltage

MA2J7280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J7280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For wave detection ue pl d in an c se ed lud pl vi an m m es

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J7280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For wave detection • Package ■ Features • Code SMini2-F3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J728 (MA728) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For wave detection 0.7±0.1 0.35±0.1 1.7±0.1 5˚ • Low forward voltage VF and good wave detection efficiency η

MA2J728

Contextual Info: Schottky Barrier Diodes SBD MA2J728 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For wave detection circuit 1 0.7 ± 0.1 + 0.1 0.16 − 0.06 2 0.4 ± 0.1 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 • Absolute Maximum Ratings Ta = 25°C

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ML421

Abstract: ml621 panasonic 51k diode Panasonic ML414 ml621 ml414 ML414 battery ML1220 ml2020 panasonic battery ML614 panasonic
Contextual Info: Charging • Charging circuits Charging/discharging cycle Approx. 1,000 times at 10% discharge depth to nominal capacity Charging system* Constant-voltage charging Please strictly adhere to the specified charge voltage Operating temperature -20°C to +60°C

rtc backup battery circuit

Abstract: rechargeable coin battery Panasonic super a series rechargeable ISL1208 ISL1209 MA2J728 MA3X716 MA700 SUPER CAPACITOR
Contextual Info: Trickle Charging Lithium Batteries with the ISL1208 and ISL1209 RTC Devices Technical Brief Introduction The ISL1208 and ISL1209 Real Time Clock RTC’s devices include an active battery backup switchover function. This function allows a backup source tied to the VBAT pin to

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

CON-HDR-2X10-P100

Abstract: lc4032v-75tn48c KWH015C04-F01 LCD-KWH015C04-F01 2908-05WB-MG TPD2E001DRL CON-HDR-2X5-050 1.5 128x128 CSTN LCD 128x128 cstn kobiconn
Contextual Info: Stellaris LM3S3748 Evaluation Kit User ’s Manual EK-LM3S374 8-05 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and