M69AR048B Search Results

Contextual Info: M69AR048B 32 Mbit 2M x16 1.8V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ ACCESS TIMES: 70ns, 80ns, 85ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ BYTE CONTROL: UB/LB ■ PROGRAMMABLE PARTIAL ARRAY

ICCP16

Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY

M69AR048B

Abstract: TFBGA48
Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB

M69AR048B

Abstract: TFBGA48
Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY

e2p 25

Abstract: M36W0R6050T0
Contextual Info: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •

A0-A21

Abstract: J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h
Contextual Info: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •

J-STD-020B

Abstract: M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B
Contextual Info: M36L0R7050T0 M36L0R7050B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous

J-STD-020B

Abstract: M36W0R7050B0 M36W0R7050T0 M69AR048B
Contextual Info: M36W0R7050T0 M36W0R7050B0 128 Mbit 8Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM