M58WR032HB Search Results

8811h

Contextual Info: M58WR064HT M58WR064HB M58WR032HT M58WR032HB 64 Mbit or 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Features summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

M58WR064HB

Abstract: A0-A21 CR10 M58WR064HT VFBGA56
Contextual Info: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

A0-A21

Abstract: CR10 M58WR064HB M58WR064HT VFBGA56
Contextual Info: M58WR064HT M58WR064HB 64 Mbit 4Mb x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: M58WR064HT M58WR064HB 64 Mbit 4 Mb x16, multiple bank, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional)