M54HC51 Search Results

74LS51B1

Abstract: 74HC 54HC M54HC51 M74HC51
Contextual Info: HS-CMOS INTEGRATED CIRCUITS M54HC51 lì/ 3 M74HC51 P R E L IM IN A R Y D A T A DUAL 2 WIDE-2 INPUT AND/OR INVERT GATE DESCRIPTION Th e M 5 4 /7 4 H C 5 1 is a high speed C M O S D U A L 2 W ID E -2 IN P U T A N D /O R IN V E R T G A TE fabricated in silicon gate C 2M O S technology. It has the sam e

Contextual Info: M54HC51 M74HC51 / T T SCS TH O M S O N RiflD [S 0 i[Li©Tr[S©IRDO©i DUAL 2 WIDE-2 INPUT AND/OR INVERT GATE • HIGH SPEED tpD = 10 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION Ice = 1 a*A (MAX.) at Ta = 25°C ^ ■ HIGH NOISE IMMUNITY V n ih = V NIL = 280/o V c c (MIN.)

Contextual Info: SbE D m 7^21237 ODB'lV'iS 5^17 •SGTH_ / Z T S C S -T H O M S O N M54HC51 *7# RiflD«g IIL[l M)ROÖ©i M74HC51 S G S-THONSON DUAL 2 WIDE-2 INPUT AND/OR INVERT GATE ■ HIGH SPEED tpo = 10 ns TYP.) at Vcc= 5V ■ LOW POWER DISSIPATION Ice = 1 /»A (MAX.) at TA = 25°C

Contextual Info: M54HC51 M74HC51 SGS-mOMSON ü D œ iL i êir © [io © i DUAL 2 WIDE-2 INPUT AND/OR INVERT GATE • HIGH SPEED tpo = 10 ns (TYP. at V cc = 5V ■ LOW POWER DISSIPATION lCc = 1 /*A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n ih = V niil = ^c c (MIN.)

IC 74hc51

Abstract: M74HC51 54HC 74HC M54HC51 74LS51 sgs thomson
Contextual Info: SGS -THOMSON M54HC51 M74HC51 D tS@ll[Li©Tr[S IRDO©S DUAL 2 WIDE-2 INPUT AND/OR INVERT GATE HIGH SPEED tpo = 10 ns TYP. at Vcc = 5V LOW POWER DISSIPATION ICC = 1 #*A (MAX.) at TA = 25°C HIGH NOISE IMMUNITY V nih = VN|L = 28»/o Vcc (MIN.) OUTPUT DRIVE CAPABILITY

74HC51

Abstract: data sheet IC 74hc51 74LS51 truth table M54HC51 M54HC51F1R M74HC51 M74HC51B1R M74HC51C1R M74HC51M1R
Contextual Info: M54HC51 M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE . . . . . . . . HIGH SPEED tPD = 10 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

74LS51 truth table

Contextual Info: r Z 7 S C S -T H O M S O N Ä 7# [ * « L [ I O T « S M54HC51 M74HC51 DUAL 2 W IDE 2 INPUT AND/OR INVERT GATE HIGH SPEED tPD = 10 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 ‘C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)