M54HC166 Search Results

54HC

Abstract: 74HC M54HC166 M74HC166
Contextual Info: M54HC166 M74HC166 HS-CMOS" INTEGRATED CIRCUITS ' ? PRELIltflNARY DATA 8 BIT PISO SHIFT REGISTER DESCRIPTION The M54/74HC166 is a high speed C2MOS 8 BIT PISO SHIFT REGISTER fabricated in silicon gate C2MOS technology. It has the same high speed perform ance of LSTTL com bined with true CM OS

74HC166

Abstract: 54HC 74HC M54HC166 M74HC166 FZJ 125
Contextual Info: M54HC166 M74HC166 SGS-THOMSON > 7 # . IM H M IIU llE M iiO IK g g 8 BIT PISO SHIFT REGISTER H IG H S P E E D fMAX = 50 M H z T Y P a t V CC = 5 V LO W P O W E R D IS S IP A T IO N Iq q = 4 fiA (M A X .) at T /\ = 2 5 ° C H IG H N O IS E IM M U N IT Y V N|H = V N il = 280/0 V CC (M IN .)

Contextual Info: 5bE D • 7 ^ 2 3 7 0 0 3 ^ 7 M4M ■ SGTH M54HC166 M74HC166 SCS-THOMSON HLUraBSUimiÊi S 6 S-THOHSON 7 1-Lt -C>cl - 0 5 8 BIT PISO SHIFT REGISTER ■ HIGH SPEED *MAX = 50 MHz (TYP. at VCc = 5V ■ LOW POWER DISSIPATION |c c = 4 fJK (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY

M54HC166

Abstract: M54HC166D M54HC166K M54HC166K1
Contextual Info: M54HC166 RAD-HARD 8 BIT PISO SHIFT REGISTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 63 MHz TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

74LS166

Abstract: M54HC166 M54HC166F1R M74HC166 M74HC166B1R M74HC166C1R M74HC166M1R
Contextual Info: M54HC166 M74HC166 8 BIT PISO SHIFT REGISTER . . . . . . . . HIGH SPEED fMAX = 57 MHz TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

Contextual Info: /= 7 *7Æ. M 54H C 166 M 74H C 166 S G S -T H O M S O N 6SlD ÊISi lllLi(Sî @lii!IB(S§ 8 BIT PISO SHIFT REGISTER • HIGH SPEED fMAX = 50 M H z (TYP. at VCc = 5V ■ LOW POW ER DISSIPATION IC C = 4 f<A (MAX.) at T A = 2 5 °C ■ HIGH NO ISE IM M U N ITY

Contextual Info: r r z Ä 7 # S G S -T H O M S O N M M [R I(g T [H 3 K S M 54HC166 M 74HC166 8 BIT PISO SH IFT REG ISTER HIGHSPEED fMAX = 57 MHz (TYP. AT VCC = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics

C1668

Contextual Info: r Z 7 S C S -T H O M S O N *7 Æ » m m m J B S m m m M 54H C 166 M 74H C 166 8 BIT PISO SHIFT REGISTER • HIGH SPEED fMAX - 50 MHz TYP. at VCc - 5V ■ LOW POWER DISSIPATION ICC - 4 (MAX.) at TA - 25°C ■ HIGH NOISE IMMUNITY Vnih “ Vnil ■ 28% Vcc (MIN.)