M52S64164A Search Results
M52S64164A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1M x 16-Bit x 4 Banks synchronous DRAMContextual Info: ESMT M52S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page) |
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M52S64164A M52S64164A-7 133MHz 1M x 16-Bit x 4 Banks synchronous DRAM | |
Contextual Info: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Revision 1.3 (Mar.11, 2008) - Modify ICC spec - Modify AC parameters |
Original |
M52S64164A | |
Contextual Info: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Elite Semiconductor Memory Technology Inc. Publication Date: Sep. 2007 |
Original |
M52S64164A | |
M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
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256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII |