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    ECG909D

    Abstract: ECG909 500C MTL iota EC090 79CU
    Contextual Info: Lfci53ci5ö OODBbOfl b • 17E D PHILIPS E C G INC ECG909,ECG909D HIGH PERFORMANCE OPERATIONAL AMPLIFIER semiconductors EC0909 • 2 mV Maximum Offset Voltage • 50 nA Maximum Offset Current ■335_ .305 General Description - Hlgh-galn operational amplifier constructedon a single silicon chip.


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    Transistor SJE 5331

    Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
    Contextual Info: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in


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    tn315

    Abstract: ECG 815 TIL 815
    Contextual Info: PHILIPS EC Q INC 17 E d D0 D3 Sbb 5 u ' T ' 7 7 ~ o 7 ~ ) m ECG815 TV HORIZONTAL PROCESSOR semiconductors . . . low-level horizontal sections including phase detector, oscillator and pre-driver — a device designed for use in all types of television receivers.


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    ecg815cg815tn315ecg 815+1til 815 PDF