LBS3131 Search Results

diode ESM 134

Contextual Info: II LbS3131 D 0 n i a 3 1 D EVELO PM EN T DATA ESM6045A V ESM6045D(V) This data sheet coi. ains advance information and specifications are subject to change without notice. N AflER PHILIPS/DISCRETE E5E D T - 2 3 -3 5 “ S IL IC O N D A R LIN G T O N P O W E R T R A N S IS T O R S

Contextual Info: BDT65; 65A BDT65B; 65C _ y v SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. TO-220 plastic envelope. PNP complements are

Contextual Info: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BLV97

Abstract: D-10 ferroxcube wideband hf choke
Contextual Info: N AMER PH I L I P S / D I S C R E T E - " • w vu ObE D w I ■ w b t,S3 T 3 1 D1 3 L 2 fi •9 N O R T H / A M P E R E X / D I S C R ETE DLE D BLV97 'TZ33~J U.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base