LQ821 Search Results
LQ821 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LQ821 | Polyfet RF Devices | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | Original | 34.61KB | 2 |
LQ821 Price and Stock
Knowles CDE 380LQ821M400A052Aluminum Electrolytic Capacitor - 820uF ±20% - 400V - 85°C - Through Hole Snap-In - 50mm x 35mm Dia. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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380LQ821M400A052 |
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380LQ821M400A052 | Bulk | 3 Weeks | 1 |
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380LQ821M400A052 | Bulk | 40 | 40 |
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Knowles CDE 380LQ821M250K022Aluminum Electrolytic Capacitor - 820uF ±20% - 250V - 85°C - Through Hole Snap-In - 30mm x 30mm Dia. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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380LQ821M250K022 |
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Knowles CDE 381LQ821M250K032Aluminum Electrolytic Capacitor - 820uF ±20% - 250V - 105°C - Through Hole Snap-In - 35mm x 30mm Dia. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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381LQ821M250K032 |
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381LQ821M250K032 | Bulk | 66 | 30 Weeks | 1 |
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381LQ821M250K032 | Bulk | 3,000 |
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Knowles Precision Devices 381LQ821M250K032Capacitor: electrolytic; SNAP-IN; 820uF; 250VDC; Ø30x35mm; ±20% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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381LQ821M250K032 | 364 | 23 |
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Knowles Precision Devices 381LQ821M200J042+S381LQ821M200J042+S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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381LQ821M200J042+S | 100 | 25 |
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LQ821 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LQ821
Abstract: LDMOS Crss RF L2C gps
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Original |
lq821ldmoscrss rfl2c gps | |
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Contextual Info: polyfet rf devices LQ821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
Original |
lq821 | |
UT34-50
Abstract: 125mu pot 10k zener diode c5 10NF 1201W 20PF 470PF LQ821 22AWG
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Original |
ut34-50470pf125mulq821+8 | |
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Contextual Info: polyfet rf devices LQ821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
Original |
lq821 | |
LQ821Contextual Info: polyfet rf devices LQ821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
Original |
lq821 | |
MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
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Original |
l8821plb421lp721sm341+8 | |
rf push pull mosfet power amplifier
Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
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Original |
200num1sq221lk822lk722+11 |