LP2305DSLT1G Search Results

mosfet SOD 23

Abstract: 33039 marking P5S lp2305
Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V LP2305DSLT1G RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G S-LP2305DSLT1G VDS= -8V RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features Advanced trench process technology