LED20 Search Results

Contextual Info: LED2000 3 A monolithic step-down current source with synchronous rectification Datasheet - production data Applications • High brightness LED driving  Halogen bulb replacement  General lighting  Signage SO8 VFQFPN8 4x4 Description Features The LED2000 is an 850 kHz fixed switching

LED20-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED20FC-TEC

Contextual Info: LED20FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED20FC-SMD5

Contextual Info: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid

Contextual Info: LED2000 3 A monolithic step-down current source with synchronous rectification Datasheet — production data Features • 3.0 V to 18 V operating input voltage range ■ 850 kHz fixed switching frequency ■ 100 mV typ. current sense voltage drop ■ PWM dimming

LED2001

Contextual Info: STEVAL-ILL054V2 4 A HB LED driver with dimming function based on the LED2001 in an HSOP8 package Data brief current is set by connecting a sensing resistor to the feedback pin. The size of the overall application is minimized thanks to the high switching frequency and

LED20FC

Contextual Info: LED20FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED2001

Contextual Info: LED2001 4 A monolithic step-down current source with synchronous rectification Datasheet - production data Applications • High brightness LED driving • Halogen bulb replacement • General lighting • Signage HSOP8 VFQFPN8 4x4 Description Features The LED2001 is an 850 kHz fixed switching

LED2000PUR

Abstract: LED2000
Contextual Info: LED2000 3 A monolithic step-down current source with synchronous rectification Datasheet — production data Features • 3.0 V to 18 V operating input voltage range ■ 850 kHz fixed switching frequency ■ 100 mV typ. current sense voltage drop ■ PWM dimming

Contextual Info: STEVAL-ILL054V1 4 A HB LED driver with dimming function based on the LED2001 in a QFN package Data brief current is set by connecting a sensing resistor to the feedback pin. The size of the overall application is minimized thanks to the high switching frequency and

LED20FC-PR-WIN

Contextual Info: LED20FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED20

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm 1.1 mW Model LED20 •Light Emitting Diodes LED20 are designed for emitting at a spectral range around 2050 nm. Heterostructures HS are grown on GaSb substrates. The output emission can be modulated by current flowing in

Contextual Info: STEVAL-ILL051V2 3 A HB LED driver with dimming function based on the LED2000 in a QFN package Data brief current is set by connecting a sensing resistor to the feedback pin. The size of the overall application is minimized thanks to the high switching frequency and

Contextual Info: STEVAL-ILL051V1 3 A HB LED driver with dimming function based on the LED2000 in an SO-8 Batwing package Data brief Features • 3.0 V to 18 V operating input voltage range • 850 kHz fixed switching frequency • 100 mV typ current sense voltage drop • PWM dimming

LED20FC-TEC-PR

Contextual Info: LED20FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

capacitor 68nF

Abstract: capacitor 100nf 100v inductor 100uH C3225X5R1C106M 100v capacitor 1210 capacitor 470nF 68nf capacitor 100v capacitor 10uf
Contextual Info: 2-4-05 Rev. 1 LM5000 Vanity Mirror Backlight L1 Vin = 8-12V RF D1 VIN CIN SW CSS CF BYP CB LM5000 FS FB AGND CO1 SS CO2 30mA SHDN COMP PGND RC CC2 CC1 LED1 LED20 RSET Theory of Operation This circuit boosts the input voltage in order to keep 20 LEDs in a single series string, ensuring

LED2000

Abstract: XAL6060-223 VFQFPN8 4x4 LED2000DR LED2000PUR XAL6060
Contextual Info: LED2000 3 A monolithic step-down current source with synchronous rectification Datasheet — production data Features • 3.0 V to 18 V operating input voltage range ■ 850 kHz fixed switching frequency ■ 100 mV typ. current sense voltage drop ■ PWM dimming

LED20-PR

Contextual Info: LED20-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown on GaSb substrates by MOCVD. GaInAsSb is used in the active layer. Wide band gap solid solutions AlGaAsSb are used for good electron confinement.

LED20-TEC

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC 1.1 mW •Light Emitting Diodes LED20-TEC are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED20FC-PR

Contextual Info: LED20FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

0X29

Abstract: 0X48 GPIO22 F75121R
Contextual Info: F75121 F75121R/RG Dynamic VID Control + 8 GPIO Datasheet Release Date: July, 2007 Revision: V0.24P F75121 V0.24P July, 2007 F75121 F75121R/RG Datasheet Revision History Version Date Page Revision History 0.20P Apr/2003 0.21P Oct/2003 6 0.22P Jan/2004 5-7 Revise pin name and pin description

LED60

Abstract: IHLP-2525BD-01 ISL97635 ISL97635IRZ TB347 TB379 brt7
Contextual Info: ISL97635 Data Sheet December 22, 2008 SMBus 8-Channel LED Driver Features The ISL97635 is a digitally controlled LED driver that controls 8 channels of LED current for LCD backlight applications. The ISL97635 is capable of driving typically 72 8x9 pieces of 3.5V/30mA or 80 (8x10) pieces of

LED25

Abstract: LED10 QFN-24 QFN-24 lcd SCHOTTKY DIODE 20V 2A LED28 DIM100
Contextual Info: FP6741A fitipower integrated technology lnc. Boost White LED Driver with 10-Channel Current Sources Description Features The FP6741A is a step-up current mode PWM DC/DC converter with 10 channel constant current sources to match LEDs with quite uniform current. It is suitable

sq-h48w

Abstract: SQ-H48W Datasheet KS8995XA LF8731 Transpower HB826-2 ycl dc 101 YCL PH406466 YCL PT163020 pin configuration of sq-h48w lan transformer KS8995E
Contextual Info: KS8995XA Integrated 5-Port 10/100 QoS Switch Rev 2.6 General Description The KS8995XA is a highly integrated Layer-2 quality of service QoS switch with optimized bill of materials (BOM) cost for low port count, cost-sensitive 10/100Mbps switch systems. It also provides an