L88007 Search Results

Contextual Info: polyfet rf devices L88007 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

LDMOS

Contextual Info: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost