L74VHC1G00
Abstract: DF footprint A114 A115 C101 JESD22 L74VHC1G00DFT1
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate L74VHC1G00 The L74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
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L74VHC1G00
L74VHC1G00
DF footprint
A114
A115
C101
JESD22
L74VHC1G00DFT1
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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l74vhc1g01
Abstract: sot23-5 transistor T1 A114 A115 C101 JESD22 L74VHC1G00
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with L74VHC1G01 Open Drain Output The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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L74VHC1G01
L74VHC1G01
sot23-5 transistor T1
A114
A115
C101
JESD22
L74VHC1G00
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