L74VHC1G00
Abstract: DF footprint A114 A115 C101 JESD22 L74VHC1G00DFT1
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate L74VHC1G00 The L74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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l74vhc1g01
Abstract: sot23-5 transistor T1 A114 A115 C101 JESD22 L74VHC1G00
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with L74VHC1G01 Open Drain Output The L74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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l74vhc1g01sot23-5 transistor t1a114a115+3c101jesd22l74vhc1g00
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