dynamic ram binary cell
Contextual Info: O K I SEMICONDUCTOR GROUP AT ,6 7 ? 4 2 4 0 O K I O K I SEMICONDUCTOR GROUP 89D 0 2 7 4 6 D L724S40 0D0274L, 4 -c ? 3 '/7 semiconductor_ MSC2311YS8/KS8_ 1,048,576 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2311Y S8/KS8 is a fu lly decoded, 1,048,576 words X 8 bit NMOS dynamic random
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l724s400g027mlmsc2311ys8/ks8msm411000js+1dynamic ram binary cell
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ms1250
Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith
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msm6652-xxx/msm6653-xxx/msm6654-xxx/msm6655-xxx/msm6656-xxx_msm6650+15msm637512bit-40db00msa/msk/00mhzar76-202ms1250sunnyeprom 6653ln 258oki voice synthesizer msm6375sunny oscillatorsmsm6653msm6656-xxx10ffe
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mz 1532
Abstract: MSM511001A-70 FZJ 165 511001A
Contextual Info: 4bE D w • b?24S4ü O K I □ □□ 'IS n SEMICONDUCTOR O K I semiconductor MSM511001A 1,048,576-WORD b'H «O K IJ GROUP T - V é 'Z S W 1-BITS DYNAMIC RAM x GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 woids by 1 bit. The
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2424gmsm511001a576-wordmsm511001a-70+7140ns468mwmsm511001a-8a/80160nsmz 1532fzj 165511001a
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MSM51V4400L
Abstract: MSM51V4400SL
Contextual Info: O K I Semiconductor M SM 51V4400/L/SL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION Th eM SM 51V 4400/L/SL is a 1,048,576-word x4-bit dynamic RAM fabricatedin OKI's CMOS silicon gate technology. The M S M 51V 4400/L /S L achieves high integration, high-speed operation, and
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msm51v4400/l/sl576-wordthemsm51v4400/l/sl76-wordx4-bitdynaimc+4msm51v4400/l/26/20-pinmsm51v4400lmsm51v4400sl
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18-PIN
Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
Contextual Info: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The
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msm51c464a536-word256cycles/4ms18-pin+9300milb72m24020-pinmsm51c464a-10msm51c464a-70msm51c464a-80zip20-p-400msm51c464dd177
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L303A
Abstract: OL303A100
Contextual Info: O K I SEMICONDUCTOR GROUP 53E D b?24240 0 0 0 ? m 5 T -4 1 -0 7 1,3/im High Power Laser Diode t OL301A-20, QL303A-20, OL301A-100, OL303A-100 • DESCRIPTION OKI OL301A-20, OL303A-20, OL301A-100 and OL303A-100 are 1.3jum InGaAsP/lnP high power laser diodes developed as light sources for fiber-optic communications and optical equipment.
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ol301a-20ql303a-20ol301a-100ol303a-100+3ol303a-20l303aol303a100
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ST chn 624
Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Contextual Info: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568
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msm6588msm63880dlbfl45096mhz+10b724240st chn 624chn 712lspm2chn 618chn 631chn 648 equivalentchn 602chn 612h724
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