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L2SC3356LT1 Datasheets (2)

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Leshan Radio Company

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
L2SC3356LT1		Leshan Radio Company	High-Frequency Amplifier Transistor	Original	PDF	133.88KB	4
L2SC3356LT1G		Leshan Radio Company	High-Frequency Amplifier Transistor	Original	PDF	391.82KB	6

L2SC3356LT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
L2SC3356LT1G Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G S-L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site	Original	l2sc3356lt1g s-l2sc3356lt1g l2sc3356lt1 aec-q101 +4l2sc3356lt3g s-l2sc3356lt3g ot-23 3000/tape	PDF
Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	l2sc3356lt1g l2sc3356lt1 l2sc3356lt3g ot-23 +23000/tape 10000/tape	PDF
Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	l2sc3356lt1g l2sc3356lt1 l2sc3356lt3g ot-23 +23000/tape 10000/tape	PDF
NF 723 Abstract: L2SC3356LT1 L2SC3356LT1G L2SC3356LT3G Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	l2sc3356lt1g l2sc3356lt1 l2sc3356lt3g ot-23 +53000/tape 10000/tape 195mm 150mm nf 723	PDF
L2SC3356LT1 Abstract: L2SC3356LT1G L2SC3356LT3G transistor 20 dB Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device	Original	l2sc3356lt1g l2sc3356lt1 l2sc3356lt3g ot-23 +33000/tape 10000/tape transistor 20 db	PDF
R24 marking DATASHEET Abstract: L2SC3356LT1 Contextual Info: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 1 DESCRIPTION 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for SOT-23 low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain	Original	l2sc3356lt1 ot-23 l2sc3356lt1-4/4 r24 marking datasheet	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	zmm22 zmm24 zmm27 zmm43 +11zmm47 2x062h gk105 1ss216 gk104 smd transistors w06 d20sb80 smd marking 5as d25sb80 lrb706f-40t1g 2x062	PDF