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KTC3876
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Galaxy Semi-Conductor Holdings
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NPN Silicon Epitaxial Planar Transistor |
Original |
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134.59KB |
3 |
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KTC3876
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Korea Electronics
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EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
Scan |
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121.77KB |
1 |
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KTC3876
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
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92.74KB |
1 |
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KTC3876
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
Short Form |
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34.97KB |
1 |
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KTC3876S
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Korea Electronics
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General Purpose Transistor |
Original |
PDF
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60.93KB |
1 |
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KTC3876S
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Korea Electronics
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General Purpose Transistor |
Scan |
PDF
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114.19KB |
1 |
KTC3876
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JCET Group
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NPN transistor in SOT-23 package with 30 V collector-emitter voltage, 500 mA continuous collector current, high hFE ranging from 70 to 400, and transition frequency of 300 MHz. |
Original |
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KTC3876
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package with 30 V collector-emitter voltage, 500 mA collector current, 200 mW power dissipation, and DC current gain ranging from 170 to 400 depending on conditions. |
Original |
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KTC3876
