KSY14 Search Results

Hall sensors Siemens

Abstract: KSY14 TESLA KSY14 Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon
Contextual Info: KSY14 – the Ultra-flat, Versatile Hall Sensor Reprint∗ from Siemens Components XXV 1990 . No.5. Page 167 to 172 Author: Martha Wolfrum Hall sensors are semiconductors that are sensitive to a magnetic field and can produce voltages in the presence of constant or varying magnetic fields. The new

Contextual Info: ,•— Infineon - technologies KSY14 Hall Sensor Version 2.0 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature

siemens magnetic sensors ksy14

Abstract: B143-H6358-G1-X-7400 IC 7400 7400 ic 7400 B115-H6563-X-X-7600 7400+integrated
Contextual Info: S IE M EN S Literaturhinweise Information on Literature Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 10.94 Exerpt to our Literature Guide 10.94 Bestell-Nr.: B192-H6763-G1-X-7400 Ordering No.: B192-H6763-G1-X-7400 Titel

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

78o5

Abstract: KSY44 KTY 20-5 25L90 KPY 4 KTY 23-5 KTY 11-6 KSY63 BH-705 KTY13-51
Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Silizium-Temperatur-Sensoren Silicon Temperature Sensors T yp B a s ic R é s is ta n c e 2 5 °C ^rnax ( 2 5 “O T h e rm a l tim e c o n s ta n t 0 - 6 3 % T yp e il mA in still a ir KTY 102> KTY 10-5 KTY 10-6

magnetic transducer interface

Abstract: KSY14 TESLA KSY14 Hall amplifier Wheatstone Bridge amplifier hall magnetic field sensor circuit schematic effec hall hall current transducer hall effect sensor magnetic transducers
Contextual Info: Hall-Effect Magnetic Transducer Interface February 2001 Circuit Solution Many applications rely on the ability to sense the polarity and magnitude of a magnetic field. One of the most common technologies used for magnetic field measurement is based on the Hall effect. Hall-effect sensors are most

Q62902-B146

Abstract: gh 312 SBV 604 Q65312-L100-U KSY13 SBV613 Q65310-L100-U75 BH7014
Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Feldplatten-Potentiometer ohne Verstärker Typ Type FP 312 L 100 MR Potentiometer Without Amplifier Hot Jt Vout %H n Grad/deg Ft % Ta °C Ordering Code Bild Fig. 8 850 40 75 2.5 - 2 5 . +70 Q65312-L100-U 9 Feldplatten-Potentiometer mit Verstärker

kty 10-9

Abstract: KTY 10-8 KSY10 FP 310 L 100-75 KSY44 KSY13 FP 210-D-250-22 254 kpy 1 KPY 4 KSY14
Contextual Info: Semiconductor Sensors Halbleiter-Sensoren Outline Drawings ¡n mm Maßbilder (in mm) FP 412 L 100 FP 412 D 250 Figure 2 FP 210 D 250-22 FP 210 L 100-22 Figure 1 Section A - A ^ P u n c h in g —points (0 .4 3 ) (» 0 . 8 ) 1 1 0. 0 4 0.1 1 3 .5 * J E S M c ]

5 pin package hall sensor

Abstract: 4 pin hall sensor 137 hall SENSOR Hall Siemens LOB MARKING CODE hall marking 135 175 hall sensor 4 pin package hall sensor MINIATURE CIRCUIT BREAKER siemens "4 pin" hall sensor
Contextual Info: SIEM EN S Hall Sensor K S Y 14 Features • • « • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature package Low inductive zero component

CYSJ362A

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: SIEMENS Hall Position Sensor KSY 14 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature package Low inductive zero component

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite