KSD261 Search Results

KSA643

Abstract: KSD261
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KSA643 TRANSISTOR PNP TO-92 1. EMITTER FEATURE z Collector dissipation z Complement to KSD261 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: KSD261 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA643 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit Vceo V ceo V ebo lc Pc T¡ Tstg 40 20 5 500 500 150 - 5 5 '1 5 0

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

PNP 2N4403

Abstract: KSC1330 KSC839 KSA928 KSP2222A KSC2882 ksd999
Contextual Info: TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP6602 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 KSP5172 KSC184 KSD261 SS9013 MIN 1.2 2.6 1.2 0.95 10 10 20 10 20 50 20 20 20 10 100 200

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD261 LOW FREQUENCY POWER AMPLIFIER TO -92 • C om plem ent to KSA643 • C ollector D issipation P c=500m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Rating Unit 40 20 V V Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92 • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSA643

Abstract: KSD261
Contextual Info: KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSA643

Abstract: KSD261
Contextual Info: KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA643 LOW FREQUENCY POWER AMPLIFIER TO -92 • C om plem ent to KSD261 • C ollector D issipation: Pc =5 0 0m W ABSOLUTE MAXIMUM RATINGS TA =25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: KSD261 NPN EPITAXIAL SILICON TRAN SISTO R LOW FREQUENCY POWER AMPLIFIER TO-92 • Complement to KSA643 • Collector Dissipation Pc*500m W ABSOLUTE MAXIMUM RATINGS TA*25'C Characteristic Rating Unit VcBO VcEO 40 20 V V V ebo 5 500 Sym bol Collector-Base Voltage

KSA643

Abstract: KSD261
Contextual Info: KSD261 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA643 • Collector Dissipation PC=500mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSA643

Abstract: KSD261
Contextual Info: KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

KSA643

Contextual Info: KSA643 KSA643 Low Frequency Power Amplifier • Collector Power Dissipation: PC =500mW • Complement to KSD261 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

KSA643

Abstract: KSD261
Contextual Info: KSA643 KSA643 Low Frequency Power Amplifier • Collector Power Dissipation: PC =500mW • Complement to KSD261 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

KSA643

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation: PC =500mW TO-92 ABSOLUTE MAXIMUM RATINGS TA =25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSD261

Abstract: ksa843 4411 transistor
Contextual Info: SAMSUNG SEMICONDUCT OR . INC 14E KSD261 D | 7*11,4142 000^=102 b | Y - Z J - lf NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92 • Complement to KSA643 • Collector Dlulpatlon Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

KSA1298

Abstract: KSC3265 KSD261
Contextual Info: KSC3265 KSC3265 Low Frequency Amplifier 3 • Complement to KSA1298 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units

KSA1298

Abstract: KSC3265 KSD261
Contextual Info: KSC3265 KSC3265 Low Frequency Amplifier 3 • Complement to KSA1298 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A