KRA309 Search Results
KRA309 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KRA309 | Korea Electronics | Built in Bias Resistor | Original | 89.01KB | 4 | ||
| KRA309 | Korea Electronics | Built in Bias Resistor | Original | 89.21KB | 4 | ||
| KRA309 | Korea Electronics | EPITAXIAL PLANAR PNP TRANSISTOR | Scan | 382.85KB | 4 | ||
| KRA309 | Korea Electronics | (KRA307 - KRA309) EPITAXIAL PLANAR PNP TRANSISTOR | Scan | 382.84KB | 4 | ||
| KRA309E | Korea Electronics | Built in Bias Resistor | Original | 87.68KB | 4 | ||
| KRA309V | Korea Electronics | Built in Bias Resistor | Original | 89.03KB | 4 |
KRA309 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KRA309Contextual Info: SEMICONDUCTOR KRA309 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PJ 1 2 Item Marking Description Device Mark PJ KRA309 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method |
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kra309 | |
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Contextual Info: SEM ICONDUCTOR KRA307E-KRA309E TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î r — • With Built-in Bias Resistors • Simplify Circuit Design DIM |
OCR Scan |
kra307e-kra309ekra307ekra308ekra309e+1 | |
MARK 006
Abstract: transistor 309 pj marking KRA307 KRA308 KRA309
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OCR Scan |
kra307kra309kra308kra307-309+3 | |
KRA307
Abstract: KRA308 KRA309 DSA00384749
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kra307kra309kra308dsa00384749 | |
pj markingContextual Info: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design H G A ・High Packing Density. D 2 |
Original |
kra307vkra309vkra308vkra307v309v+1 | |
KRA307E
Abstract: KRA308E KRA309E
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Original |
kra307ekra309ekra308e | |
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Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D DIM A B C D G A 2 H ・Reduce a Quantity of Parts and Manufacturing Process |
Original |
kra307ekra309ekra308e | |
KRA307E
Abstract: KRA308E KRA309E
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Original |
kra307ekra309ekra308e | |
KRA307
Abstract: KRA308 KRA309
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Original |
kra307kra309kra308 | |
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Contextual Info: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/4 |
Original |
kra307vkra309v | |
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Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process |
Original |
kra307ekra309ekra308e | |
transistor 309Contextual Info: KRA307SEMICONDUCTOR KRA309 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process |
OCR Scan |
kra307semiconductorepitaxialkra309kra307kra309+2 | |
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Contextual Info: S EM IC O N D U C T O R KRA307V-KRA309V TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors • Simplify Circuit Design DIM |
OCR Scan |
kra307v-kra309vkra30kra308vra309v | |
KRA307V
Abstract: KRA308V KRA309V
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kra307vkra309vkra308v | |
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Contextual Info: SEMICONDUCTOR KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D G ・Reduce a Quantity of Parts and Manufacturing Process |
Original |
kra309kra307kra308 | |
KRA309EContextual Info: SEMICONDUCTOR KRA309E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PJ No. Item Marking 1 Device Mark PJ KRA309E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1 |
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kra309e | |
KRA307V
Abstract: KRA308V KRA309V
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kra307vkra309vkra308v | |
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Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process |
Original |
kra307ekra309ekra308e | |
KRA307
Abstract: KRA308 KRA309
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Original |
kra307kra309kra308 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2n2904ebc859kds135s2n2906e+16 | |
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
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Original |
02cz1002cz1102cz1202cz13+15 | |
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
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Original |
2n2222/aktn2222/a2sa1150kta1272+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2n2904ebc859kds135s2n2906e+16 | |