KMM53632004B Search Results

KMM53632004BK

Abstract: KMM53632004BKG
Contextual Info: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.

Contextual Info: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M X 36 DRAM SIM M Using 16M x4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53 63 200 4B is a 32 M x3 6 b its RAM high d e n sity m em o ry m odule. The D ynam ic • S am sung

Contextual Info: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M X 36 DRAM SIMM Using 1 6Mx4 & 1 6Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and

KMM53632004BK

Abstract: KMM53632004BKG
Contextual Info: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and