KMM372E40 Search Results

Contextual Info: DRAM MODULE KMM372E404CS Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372E404CS DRAM MODULE KMM372E404CS

Contextual Info: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in

Contextual Info: KMM372E400CK/CS KMM372E410CK/CS DRAM MODULE KMM372E400CK/CS & KMM372E410CK/CS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung

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Abstract: 4004C
Contextual Info: KMM372E400CK/CS K M M 3 7 2 E 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 E 4 0 0 C K / C S & K M M3 72E 41 OCK/CS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V G E N E R A L DESCRI PTION FEATURES The Samsung KM M 372E40 1 0C is a 4M x72bits Dynamic

Contextual Info: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

KMM364E124AJ-6

Abstract: CT-17 AS5T KMM372V213AJ KMM364C1 CT55H
Contextual Info: 1. INTRODUCTION 8 Byte DIMM Fast Page Mode Ì 5V 1Mx64 1Mx72 V— KMM364C120CJ/CT-5 H KMM364C120CJ/CT-6 ' H KMM364C124AJ-6 H KMM364C124AJ-7 T- ! KMM372C120CJ/CT-5 H KMM372C120CJ/CT-6 — I KMM372C120CJ1/CT 1-5 H KMM372C120CJ1/CT1-6 — I KMM372C122CJ/CT-5