KGF1608 Search Results

KGF1608

Abstract: K1608 SMD Marking 4570
Contextual Info: Pr E2Q0042-27-X2 y ar in im el ¡ electronic components KGF1608 ¡ electronic components KGF1608 This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1608, housed in a SMD type ceramic package, is a discrete GaAs power FET that features

MH 7474

Abstract: OKI 5205 LHi 958 LHi 954 BV 17234 dsa 362 7474 ic specifications KGF1608 gsm amplifier 4564 features of ic 7474
Contextual Info: O K I Semiconductor KGF1608_ G aA s C eram ic Pow er FET for GSM and TD M A A p plications D E S C R IP T IO N The KGF1608 is a high-power, high-efficiency GaAs power FET that features high gain at high currents, w ith the ultra-low-impedance drive required for ISM, PHS and PCS applications. This device is designed

K1608

Abstract: KGF1608 TA 7634
Contextual Info: e Pr a in KGF1608 lim ry ¡ electronic components KGF1608 ¡ electronic components E2Q0042-16-60 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1608, housed in a SMD type ceramic package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1608 specifications are guaranteed to a fixed

Contextual Info: O K I Semiconductor K G F 1608 GaAs Ceramic Power FET for GSM and TDMA Applications DESCRIPTION The KGF1608 is a high-power, high-efficiency GaAs power FET that features high gain at high currents, with the ultra-low-impedance drive required for ISM, PHS and PCS applications. This device is designed

F1313

Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Contextual Info: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp

tag 9205

Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
Contextual Info: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■

38mm2

Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
Contextual Info: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.

K1305

Abstract: heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203
Contextual Info: INTRODUCTION PRODUCT OVERVIEW PRODUCT/ PACKAGE CORRESPONDENCE ELECTRICAL CHARACTERISTICS PACKAGE DIMENSIONS PACKING SPECIFICATIONS HANDLING PRECAUTIONS REFLOW CONDITIONS 1 PRODUCT OVERVIEW 1 ¡ electronic components PRODUCT OVERVIEW E2Q0003-16-60 PRODUCT OVERVIEW