KGF1607 Search Results

KGF1607

Abstract: K1607 8958 fet 3773 SMD
Contextual Info: Pr E2Q0041-27-X3 im el in KGF1607 ar y ¡ electronic components KGF1607 ¡ electronic components This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1607, housed in a SMD type ceramic package, is a discrete GaAs power FET that features

Contextual Info: O K I Semiœnductor K6F1607_ GaAs Ceramic Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1607 is a high-power, high-efficiency GaAs power FET that features high gain at high current w ith the ultra-low impedance drive required for cellular, ISM, PHS and PCS applications. This device is

AN 17821

Abstract: AN 17821 A PO 111 oki marking CQ 629 KGF1607 8958 fet
Contextual Info: O K I Semiconductor KGF1607_ GaAs Ceramic Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1607 is a high-power, high-efficiency GaAs power FET that features high gain at high current w ith the ultra-low impedance drive required for cellular, ISM, PHS and PCS applications. This device is

38mm2

Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
Contextual Info: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.

K1305

Abstract: heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203
Contextual Info: INTRODUCTION PRODUCT OVERVIEW PRODUCT/ PACKAGE CORRESPONDENCE ELECTRICAL CHARACTERISTICS PACKAGE DIMENSIONS PACKING SPECIFICATIONS HANDLING PRECAUTIONS REFLOW CONDITIONS 1 PRODUCT OVERVIEW 1 ¡ electronic components PRODUCT OVERVIEW E2Q0003-16-60 PRODUCT OVERVIEW