K6X8016T3B Search Results

K6X8016T3B Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K6X8016T3B		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9
K6X8016T3B-F		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9
K6X8016T3B-Q		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9
K6X8016T3B-TF55		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9
K6X8016T3B-TF70		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9
K6X8016T3B-TQ70		Samsung Electronics	512K x 16 bit Low Power Full CMOS Static RAM	Original	PDF	129.1KB	9

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Samsung Semiconductor K6X8016T3B-TF55
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Bristol Electronics	K6X8016T3B-TF55		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K6X8016T3B-TF70
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Bristol Electronics	K6X8016T3B-TF70		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SAMSUNG ELECTRONICS INC K6X8016T3BUF55OBS AVAILABLE EU
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ComSIT USA	K6X8016T3BUF55OBS		576			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K6X8016T3BUF55 512 K X 16 BIT LOW POWER FULL CMOS STATIC RAM Standard SRAM, 512KX16, 55ns, CMOS, PDSO44
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ComSIT USA	K6X8016T3BUF55		629			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Electronics Co. Ltd K6X8016T3BTF70 Electronic Component
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ComSIT USA	K6X8016T3BTF70		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K6X8016T3B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6X8016T3B-F Abstract: K6X8016T3B-TQ70 K6X8016T3B K6X8016T3B-Q K6X8016T3B-TF55 Contextual Info: Preliminary CMOS SRAM K6X8016T3B Family Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002	Original	K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-F K6X8016T3B-TQ70 K6X8016T3B-Q K6X8016T3B-TF55	PDF
K6X8016T3B-UF55 Abstract: K6X8016T3B-UF70 K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55 Contextual Info: K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V Min • Three state outputs	Original	K6X8016T3B 512Kx16 44-TSOP2-400F K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-UF55 K6X8016T3B-UF70 K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55	PDF
K6X8016T3B-UF55 Abstract: K6X8016T3B K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55 Contextual Info: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002	Original	K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-UF55 K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55	PDF
K6X8016T3B Abstract: K6X8016T3B-F K6X8016T3B-Q Contextual Info: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002	Original	K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-F K6X8016T3B-Q	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF
HM628100 Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA	Original	Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006	PDF
K6X8016T3B-UF55 Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 Contextual Info: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm	Original	AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN	PDF