mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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ixz210n50lixz2210n50l175mhzmosfet 4702+87272824016 an7825978442tl 494169106j934mosfet 4942
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mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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ixz210n50lixz2210n50l175mhzdsixz210n50l+8mosfet 4702s 8050 d 331 transistordv 78129974 mosfet9540 mosfet7872478105mj 7364
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IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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ixz210n50lixz2210n50l175mhzdsixz210n50l+4rf mosfet" 300wmosfet 47029540 mosfetixys rf
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor
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IXZH10N50LA
Abstract: ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905
Contextual Info: IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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ixzh10n50la/b175mhzixzh10n50lbixzh10n50la+10dsixzh10n50la/bixzh10n50lixzh10n507310 mosfetmosfet 168.54ixz210n50l78105ixzhixzh10ntd 6905
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"RF MOSFETs"
Abstract: IXz210n50l IXZ2210N50L RF MOSFETs "RF MOSFET" 300W DE275X2 Linear MOSFET mosfet 300w sd2 transistor DE275
Contextual Info: TM Linear RF Z-MOS Ultra Linear Low Capacitance RF Power MOSFET May 2003 Description This new line of low capacitance linear RF MOSFETs are ideal for applications up to 250MHz including; 1.5T & 3T MRI, HF & VHF Base Stations and Broadcast applications. The new linear Z-MOSTM portfolio features a BVDSS voltage rating of 500V that is nearly
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250mhzde275de275x2ixz210n50l+8650pfixz2210n50l175mhzrf mosfetsrf mosfet" 300wlinear mosfetmosfet 300wsd2 transistor
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