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    IXTP2N60P Search Results

    IXTP2N60P Functional Equivalents (3)

    The Functional Equivalents tab will give you options that are likely to match the same function of IXTP2N60P, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    2SK2865(TE16L1,NQ) Toshiba America Electronic Components Check for Price Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IXTY2N60P IXYS Corporation Check for Price Power Field-Effect Transistor, 2A I(D), 600V, 5.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    NDD02N60Z-1G onsemi Check for Price Power Field-Effect Transistor, 2.2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    IXTP2N60P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP2N60P
    		IXYS PolarHV Power MOSFET Original PDF 136.85KB 4
    SF Impression Pixel

    IXTP2N60P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTP2N60P

    MOSFET N-CH 600V 2A TO220AB
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    DigiKey IXTP2N60P Tube
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    Verical IXTP2N60P 15 15
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    Arrow Electronics IXTP2N60P 15 99 Weeks 15
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    IXTP2N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP2N60P

    Abstract: 2n60p IXTY2N60P IXTP IXTP IXTP IXTP 237 521 02
    Contextual Info: IXTY2N60P IXTP2N60P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTY2N60P IXTP2N60P O-252 2N60P IXTP2N60P IXTY2N60P IXTP IXTP IXTP IXTP 237 521 02 PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTY2N60P IXTP2N60P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 2A ≤ 5.1Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTY2N60P IXTP2N60P O-252 2N60P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF