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    IXTH24N50L Search Results

    IXTH24N50L Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH24N50L
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 24A TO-247 Original PDF 5
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    IXTH24N50L Price and Stock

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    Littelfuse Inc IXTH24N50L

    Mosfet, N-Ch, 500V, 24A, To-247-3; |Littelfuse IXTH24N50L
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    Onlinecomponents.com IXTH24N50L
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    IXYS Corporation IXTH24N50L

    MOSFETs 24 Amps 500V 0.30 Ohms Rds
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    TME IXTH24N50L 1
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    IXTH24N50L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixth24n50l

    Abstract: 24N50L
    Contextual Info: Preliminary Technical Information Linear Power MOSFET IXTH24N50L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM


    Original
    ixth24n50lo-24724n50l04-05-07-b PDF

    IXTH24N50L

    Abstract: DS99125B 24n50l
    Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTH24N50L VDSS ID25 RDS on = = ≤ 500V 24A Ω 300mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500


    Original
    ixth24n50lo-24724n50l01-10-11-c+1ds99125b PDF

    IXTH24N50L

    Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTH24N50L RDS on = = ≤ 500V 24A Ω 300mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500


    Original
    ixth24n50lo-247062in24n50l+101-10-11-c PDF

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Contextual Info: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original
    ixan00686710405b2ixtk46n50labdus sattar, vladimir tsukanov, "power mosfets+71000v 2a bjt1200w mosfet powerixth24n50lmosfet modern applications400v linear regulatorixtn62n50lixth12n100l PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80 PDF