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IXTT12N140 Abstract: IXTH12N140 Contextual Info: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixtt12n140 ixth12n140 o-268 o-247 +112n140	PDF

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IXTT12N140

Abstract: IXTH12N140
Contextual Info: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

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ixtt12n140 ixth12n140 o-268 o-247 +1

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