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    IXYS Corporation

    IXYS Corporation IXGH100N30B3

    Insulated Gate Bipolar Transistor, 75A I(C), 300V V(BR)CES, N-Channel, TO-247
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    Vyrian IXGH100N30B3 633
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    IXGH100N30B3 Datasheets Context Search

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    200N30PB

    Abstract: IXGH100N30B3 200n3 200n30
    Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGH100N30B3 200N30PB 7-05-08-D IXGH100N30B3 200n3 200n30 PDF

    200N30PB

    Abstract: 200n30
    Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGH100N30B3 100Turn-off 200N30PB 7-05-08-D 200n30 PDF