IXFP6N120P Search Results

IXFP6N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFP6N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 6A TO-220AB	Original	PDF		4

IXFP6N120P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXFP6N120P MOSFET N-CH 1200V 6A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFP6N120P	Tube	56		1	1 $10.85 10 $10.85 100 $6.88 1000 $6.03 10000 $6.03	Buy Now
Mouser Electronics	IXFP6N120P		183			1 $10.78 10 $8.43 100 $7.02 1000 $5.31 10000 $5.31	Buy Now
Verical	IXFP6N120P		43		8	1 - 10 $8.94 100 $8.94 1000 $8.94 10000 $8.94	Buy Now
Future Electronics	IXFP6N120P	Tube			300	1 - 10 - 100 $5.14 1000 $5.05 10000 $5.02	Buy Now
TTI	IXFP6N120P	Tube	300		50	1 - 10 - 100 $5.42 1000 $5.09 10000 $5.09	Buy Now

TME	IXFP6N120P		43		1	1 $9.34 10 $6.67 100 $5.99 1000 $5.99 10000 $5.99	Buy Now
Littelfuse Inc IXFP6N120P (POLAR HIPERFET SERIES) Mosfet, N-Ch, 1.2Kv, 6A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes \|Littelfuse IXFP6N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFP6N120P (POLAR HIPERFET SERIES)	Bulk	40		1	1 $4.82 10 $4.82 100 $4.82 1000 $4.82 10000 $4.82	Buy Now

IXFP6N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P	PDF
IXFA6N120P Abstract: IXFH6N120P IXFH6N120 IXFP6N120P Contextual Info: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB O-247 6N120P IXFH6N120P IXFH6N120	PDF
HiperFET Abstract: MOSFET 1200v 3a IXFA6N120P Contextual Info: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P HiperFET MOSFET 1200v 3a IXFA6N120P	PDF
Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions	Original	IXFA6N120P IXFP6N120P IXFH6N120P O-263 6N120P	PDF