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    IXFH12N120P Search Results

    IXFH12N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH12N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 12A TO-247 Original PDF 4
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    IXFH12N120P Price and Stock

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    IXYS Corporation IXFH12N120P

    MOSFET N-CH 1200V 12A TO247AD
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    DigiKey IXFH12N120P Tube 296 1
    • 1 $18.04
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    Mouser Electronics IXFH12N120P
    • 1 $18.48
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    Verical IXFH12N120P 265 4
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    Newark IXFH12N120P Bulk 1 1
    • 1 $3.67
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    Future Electronics IXFH12N120P Tube 300
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    TTI IXFH12N120P Tube 300
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    TME IXFH12N120P 265 1
    • 1 $16.86
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    Chip Stock IXFH12N120P 3,300
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    New Advantage Corporation IXFH12N120P 200 1
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    Vyrian IXFH12N120P 230
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    Littelfuse Inc IXFH12N120P

    Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
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    Verical IXFH12N120P 315 1
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    Arrow Electronics IXFH12N120P 315 50 Weeks 1
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    IXYS Integrated Circuits Division IXFH12N120P

    MOSFET N-CH 1200V 12A TO-247
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    Win Source Electronics IXFH12N120P 1,800
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    IXFH12N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N120P IXFV12N120P IXFV12N120PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions


    Original     		IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P PDF

    IXFH12N120P

    Abstract: 12N120P iXfh12n120 PLUS220SMD
    Contextual Info: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH12N120P IXFV12N120P IXFV12N120PS 300ns PLUS220 12N120P 4-01-08-A IXFH12N120P iXfh12n120 PLUS220SMD PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF