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IXFH12N120P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH12N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 12A TO-247	Original	PDF		4

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IXYS Corporation IXFH12N120P Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH12N120P		300		4	1 - 10 $17.19 100 $17.19 1000 $17.19 10000 $17.19	Buy Now
Mouser Electronics	IXFH12N120P		1,045			1 $20.96 10 $14.77 100 $14.77 1000 $13.04 10000 $13.04	Buy Now
TTI	IXFH12N120P	Tube			300	1 - 10 - 100 - 1000 $12.52 10000 $12.52	Buy Now
Future Electronics	IXFH12N120P	Tube		32 Weeks	300	1 - 10 - 100 $15.43 1000 $15.19 10000 $15.19	Buy Now
Littelfuse Inc IXFH12N120P Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH12N120P		29		1	1 $20.55 10 $14.65 100 $11.73 1000 $11.23 10000 $11.23	Buy Now
Arrow Electronics	IXFH12N120P		29		1	1 $20.55 10 $14.65 100 $11.73 1000 $11.23 10000 $11.23	Buy Now
Onlinecomponents.com	IXFH12N120P					1 - 10 - 100 $20.59 1000 $9.83 10000 $9.83	Buy Now

IXFH12N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N120P IXFV12N120P IXFV12N120PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS	Original	ixfh12n120p ixfv12n120p ixfv12n120ps 300ns +3plus220 12n120p 4-01-08-a	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions	Original	ixfh12n120p ixfv12n120p ixfv12n120ps 300ns +2plus220 12n120p	PDF
IXFH12N120P Abstract: 12N120P iXfh12n120 PLUS220SMD Contextual Info: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS	Original	ixfh12n120p ixfv12n120p ixfv12n120ps 300ns +5plus220 12n120p 4-01-08-a ixfh12n120 plus220smd	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF