IXFH110N25T Search Results

IXFH110N25T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH110N25T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247	Original	PDF		5

IXFH110N25T Price and Stock

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IXYS Corporation IXFH110N25T MOSFET N-CH 250V 110A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH110N25T	Tube	15		1	1 $10.57 10 $10.57 100 $6.29 1000 $5.05 10000 $5.05	Buy Now
Mouser Electronics	IXFH110N25T					1 - 10 - 100 - 1000 $5.25 10000 $5.25	Get Quote
Verical	IXFH110N25T		256		6	1 - 10 $9.14 100 $7.44 1000 $7.44 10000 $7.44	Buy Now
Bristol Electronics	IXFH110N25T		29		1	1 $8.86 10 $4.43 100 $4.43 1000 $4.43 10000 $4.43	Buy Now
Quest Components ()	IXFH110N25T		23			1 $11.87 10 $5.93 100 $5.93 1000 $5.93 10000 $5.93	Buy Now
	IXFH110N25T		23			1 $12.96 10 $8.64 100 $8.64 1000 $8.64 10000 $8.64	Buy Now

TTI	IXFH110N25T	Tube			300	1 - 10 - 100 - 1000 $5.05 10000 $5.05	Buy Now
TME	IXFH110N25T		256		1	1 $10.71 10 $8.82 100 $6.69 1000 $6.51 10000 $6.51	Buy Now
Littelfuse Inc IXFH110N25T Discmsft Nchtrenchgate-Gen1 To-247Ad/ Tube \|Littelfuse IXFH110N25T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH110N25T	Bulk			300	1 - 10 - 100 - 1000 $5.19 10000 $5.19	Buy Now
RS	IXFH110N25T	Bulk		8 Weeks	30	1 - 10 - 100 $7.28 1000 $7.05 10000 $7.05	Get Quote

IXFH110N25T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
110N25T Abstract: IXFH110N25T Contextual Info: IXFH110N25T TrenchHVTM Power MOSFET HiPerFETTM VDSS ID25 RDS on = 250V = 110A Ω ≤ 24mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFH110N25T O-247 110N25T 8-11-08-A IXFH110N25T	PDF
Contextual Info: TrenchTM HiperFETTM Power MOSFET VDSS ID25 IXFH110N25T = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFH110N25T O-247 110N25T 5-14-12-B	PDF
IXFH110N25T Contextual Info: IXFH110N25T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFH110N25T O-247 110N25T 5-14-12-B IXFH110N25T	PDF
Contextual Info: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250	Original	IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B	PDF
Contextual Info: IXFV110N25T IXFV110N25TS TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD 110N25T 5-14-12-B	PDF