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    IXFA7N80P Search Results

    IXFA7N80P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFA7N80P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 7A TO-263 Original PDF 4
    SF Impression Pixel

    IXFA7N80P Price and Stock

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    IXYS Corporation IXFA7N80P

    MOSFETs 7 Amps 800V 1.44 Rds
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    Mouser Electronics IXFA7N80P
    • 1 $6.17
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    • 100 $2.94
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    TTI IXFA7N80P Tube 300
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    TME IXFA7N80P 9 1
    • 1 $4.81
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    • 100 $2.32
    • 1000 $2.17
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    IXYS Corporation IXFA7N80P-TRL

    MOSFETs IXFA7N80P TRL
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    TME IXFA7N80P-TRL 800
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    Littelfuse Inc IXFA7N80P

    Discmosfetn-Ch Hiperfet-Polar To-263D2/; |Littelfuse IXFA7N80P
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    Newark () IXFA7N80P Bulk 300
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    IXFA7N80P Bulk 1
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    RS IXFA7N80P Bulk 8 Weeks 50
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    Onlinecomponents.com IXFA7N80P
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    Flip Electronics IXFA7N80P 1,100
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    Littelfuse Inc IXFA7N80P-TRL

    Ixfa7N80P Trl/ T&r; |Littelfuse IXFA7N80P-TRL
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    Newark () IXFA7N80P-TRL Tape & Reel 800
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    IXFA7N80P-TRL Cut Tape 1
    • 1 $5.62
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    RS IXFA7N80P-TRL Bulk 8 Weeks 800
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    Onlinecomponents.com IXFA7N80P-TRL
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    IXFA7N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFP7N80P

    Abstract: 7N80 ixfa7n80p 7N80P
    Contextual Info: IXFA7N80P IXFP7N80P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 800V = 7A Ω ≤ 1.44Ω ≤ 250ns TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixfa7n80pixfp7n80p250nso-263+37n80p9-10-a7n80 PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA7N80P IXFP7N80P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 800V = 7A Ω ≤ 1.44Ω ≤ 250ns TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixfa7n80pixfp7n80p250nso-263+27n80p9-10-a PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250 PDF

    IXFI7N80P

    Abstract: IXFP7N80P IXFA7N80P 7N80P IXFI 7n80
    Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS ID25 RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 800 800 V V VGS VGSM


    Original     		7n80po-263o-220ixfi7n80p+4ixfp7n80pixfa7n80pixfi7n80 PDF