IXCY01N90E Search Results
IXCY01N90E Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXCY 01N90E |
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TRANS MOSFET N-CH 900V 0.25A 3TO-252 | Original | 115.31KB | 3 | ||
| IXCY01N90E |
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900V gate controlled current limiter | Original | 222.67KB | 4 | ||
| IXCY01N90E |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 250MA TO-252 | Original | 3 |
IXCY01N90E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = 900V ID limit = 250mA Ω RDS(on) ≤ 80Ω D N-Channel Enhancement Mode G TO-252 AA (IXCY) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V |
Original |
ixcy01n90eixcp01n90e250mao-252+3 | |
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Contextual Info: Gate Controlled Current Limiter VDSS = 900V ID limit = 250mA Ω RDS(on) ≤ 80Ω IXCY01N90E IXCP01N90E D N-Channel Enhancement Mode G TO-252 AA (IXCY) S G S D (Tab) Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
Original |
250maixcy01n90eixcp01n90eo-252+3 | |
IXCP01N90E
Abstract: IXCY01N90E
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Original |
ixcy01n90eixcp01n90e250mao-252+4 | |
IXCY01N90EContextual Info: Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = 900V ID limit = 250mA Ω RDS(on) ≤ 80Ω D N-Channel Enhancement Mode G TO-252 AA (IXCY) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V |
Original |
ixcy01n90eixcp01n90e250mao-252+4 | |
IXDN0014
Abstract: IXCP02M35 IXCY01N90E IXCP01N90E IXCP10M35 IXCP30M35A IXCP50M35 IXCP50M35A IXCP100M45 IXCY02M35
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Original |
ixdn0014ixcp30m35aixcy02m35ixcy20m35a+11 |