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IXBA12N300HV Abstract: IXBT12N300HV Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-263 (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000	Original	ixba12n300hv ixbt12n300hv ic110 o-263 +3o-268 06egrees 12n300	PDF

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IXBA12N300HV

Abstract: IXBT12N300HV
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-263 (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000

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ixba12n300hv ixbt12n300hv ic110 o-263 +3

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