IRL3103L Search Results

Contextual Info: PD-91338F International IÖR Rectifier • • • • • • • IRL3103S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

IRL3103S

Abstract: AN-994 IRL3103L
Contextual Info: PD - 95150 Advanced Process Technology l Surface Mount IRL3103S l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3103SPbF IRL3103LPbF l HEXFET Power MOSFET D VDSS = 30V

TO-262 Package

Abstract: IRL3103L TO-262
Contextual Info: IRFZ44ES/LPbF TO-262 Package Outline Dimensions are shown in millimeters inches TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L L OT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free"

IRL3103L

Abstract: IRF640NPBF
Contextual Info: IRF640NPbF/SPbF/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free"

Contextual Info: PD - 95150 Advanced Process Technology l Surface Mount IRL3103S l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3103SPbF IRL3103LPbF l HEXFET Power MOSFET D VDSS = 30V

IRL3103L

Abstract: TO-262 Package
Contextual Info: IRF1404S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free"

IRL3103S

Abstract: marking 34A AN-994 IRL3103L
Contextual Info: PD - 95150 Advanced Process Technology l Surface Mount IRL3103S l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3103SPbF IRL3103LPbF l HEXFET Power MOSFET D VDSS = 30V

IRL3103L

Abstract: IRG4BH20K-LPbF TO-262
Contextual Info: PD- 95765 IRG4BH20K-LPbF • Lead-Free 1 IRG4BH20K-LPbF 2 IRG4BH20K-LPbF TO-262 Package Outline Dimensions are shown in millimeters inches TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE AS SEMBLY LINE "C"

Contextual Info: PD - 94162 Advanced Process Technology Surface Mount IRL3103S l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRL3103S IRL3103L l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

IRL3103S

Abstract: marking 34A AN-994 IRL3103L
Contextual Info: PD - 94162 Advanced Process Technology Surface Mount IRL3103S l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRL3103S IRL3103L l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

IRL3103L

Contextual Info: TO-262AA EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER x LOGO V PART NUMBER IR L3103L' IOR 719C 17 ASSEMBLY LOT CODE 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINEC

IRL3103S

Abstract: AN-994 IRL3103 IRL3103L
Contextual Info: PD - 91338F IRL3103S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.014Ω

1RL3103S

Abstract: C528 DIODE C525 DIODE C529 DIODE IRL3103S C527 C529
Contextual Info: PD - 9.1338E International M R Rectifier IRL3103S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

P-Channel MOSFET 800v

Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

AN-994

Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

IRF530S

Abstract: IRFZ44VL IRFZ44VS IRL3103L
Contextual Info: PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

Contextual Info: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω

Contextual Info: PD- 95759 IRF840LCSPbF IRF840LCLPbF • Lead-Free Document Number: 91068 8/24/04 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com

AN-994

Abstract: IRF1404 IRF1404L IRF1404S IRF530S
Contextual Info: PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l D l VDSS = 40V RDS on = 0.004Ω G The D2Pak is a surface mount power package capable of

C-150

Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 94763 IRFZ48Z IRFZ48ZS IRFZ48ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

IRF2204L

Abstract: IRF2204S
Contextual Info: PD - 94502 IRF2204S IRF2204L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See