IRHNA57260SE Search Results

JANSR2N7473U2

Abstract: IRHNA57260SE
Contextual Info: PD - 91839H RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 4# c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

Contextual Info: PD - 91839D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

Contextual Info: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

IRF N-Channel Power MOSFETs

Abstract: IRHNA57260SE JANSR2N7473U2
Contextual Info: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

Contextual Info: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure.

IRHNA57260SE

Contextual Info: PD - 91839G RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.043Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

IRHNA57260SE

Abstract: 9936 b
Contextual Info: PD - 91839E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

IRHNA57260SE

Contextual Info: PD - 91839F RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

IRHNA57260SE

Abstract: JANSR2N7473U2
Contextual Info: PD-91839J RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

IRHNJ597230SCS

Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5