IRHM91 Search Results
IRHM91 Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRHM9130 | International Rectifier | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package | Original | 129.35KB | 8 | ||
| IRHM9130 | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 99.57KB | 8 | ||
| IRHM9130 | International Rectifier | HEXFET TRANSISTOR | Scan | 81.15KB | 4 | ||
| IRHM9130 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.67KB | 1 | ||
| IRHM9150 | International Rectifier | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package | Original | 126.68KB | 8 | ||
| IRHM9150 | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 126.99KB | 8 | ||
| IRHM9150 | International Rectifier | -100Volt, 0.080 Ohm, RAD HARD HEXFET TRANSISTOR | Original | 98.27KB | 8 | ||
| IRHM9150 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 35.48KB | 1 | ||
| IRHM9160 | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 94.26KB | 8 | ||
| IRHM9160 | International Rectifier | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package | Original | 128.45KB | 8 | ||
| IRHM9160 | International Rectifier | REPETITIVE AVALANCHE AND dv-dt RATED HEXFET TRANSISTOR | Original | 89.79KB | 4 | ||
| IRHM9160 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 35.48KB | 1 |
IRHM91 Price and Stock
International Rectifier IRHM916035 A, 100 V, 0.075 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-254AA |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IRHM9160 | 1 |
|
Buy Now | |||||||
IRHM91 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
JANSR2N7422
Abstract: IRHM9150 IRHM93150 JANSF2N7422
|
Original |
90889cirhm9150jansr2n7422o-254aa+3 | |
h268
Abstract: H269
|
OCR Scan |
irhm91501x1051x1012mil-std-750+3 | |
|
Contextual Info: International S Rectifier Provisional Data S h eet No. PD -9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD P roduct S u m m ary -100 Volt, 0 .0 8 7 a RAD H A R D H EXFET International Rectifier’s P-channel RAD HARD tech |
OCR Scan |
irhm9160105rads | |
|
Contextual Info: Data Sheet No. PD-9.888 I3 R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.300, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and |
OCR Scan |
irhm913q1x105mil-std-750 | |
|
Contextual Info: PD - 91415C IRHM9160 IRHM93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability |
Original |
91415c | |
|
Contextual Info: PD - 90888B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω ID -11A 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for |
Original |
90888bo-254aairhm9130irhm93130+1 | |
PD908Contextual Info: PD-90889E IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number |
Original |
pd-90889eirhm9150jansr2n7422o-254aa+4 | |
|
Contextual Info: IRHM9130 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 |
Original |
irhm9130 | |
|
Contextual Info: IRHM9130D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 |
Original |
irhm9130d | |
IRHM9160
Abstract: IRHM93160 JANSF2N7425 JANSR2N7425
|
Original |
91415firhm9160jansr2n7425mil-prf-19500/660+3 | |
IRHM9150
Abstract: IRHM93150
|
Original |
90889birhm9150irhm93150 | |
IRHM9160Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.087Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold |
Original |
irhm9160 | |
|
Contextual Info: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and |
OCR Scan |
irhm915q1x1051x1012mil-std-750 | |
H265
Abstract: TO-254AA Package H266
|
OCR Scan |
irhm913q1x1051x1012mil-std-750+4 | |
|
|
|||
international rectifier NE 22
Abstract: IRHM9150 IRHM93150
|
Original |
irhm9150irhm93150-100voltinternational rectifier ne 22 | |
JANSR2N7425
Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
|
Original |
pd-91415girhm9160jansr2n7425mil-prf-19500/660+5 | |
|
Contextual Info: Preliminary Data Sheet No. PD-9.1415B International TOR Rectifier IRHM91 60 IRHM93160 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -100 Volt, 0.073£2, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology |
OCR Scan |
1415birhm91irhm93160 | |
IRHM9130
Abstract: P-channel HEXFET Power MOSFET H265
|
OCR Scan |
irhms13q1x1051x1012mil-stc-760+3 | |
IRHM9130
Abstract: IRHM93130
|
Original |
0888airhm9130irhm93130 | |
|
Contextual Info: PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for |
Original |
90888co-254aairhm9130irhm93130+1 | |
|
Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω |
Original |
pd-91415girhm9160jansr2n7425mil-prf-19500/660+3 | |
IRHM9150
Abstract: IRHM93150 JANSF2N7422 JANSR2N7422
|
Original |
90889dirhm9150jansr2n7422o-254aa+3 | |
JANSR2N7425
Abstract: IRHM9160 IRHM93160 JANSF2N7425
|
Original |
91415eirhm9160jansr2n7425mil-prf-19500/660+3 | |
|
Contextual Info: IRHM9150D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D)13 @Temp (øC)100 IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 |
Original |
irhm9150d | |