IRHM91 Search Results

JANSR2N7422

Abstract: IRHM9150 IRHM93150 JANSF2N7422
Contextual Info: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

h268

Abstract: H269
Contextual Info: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM9150 RAD HARD -100 Volt, 0.120», RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

Contextual Info: International S Rectifier Provisional Data S h eet No. PD -9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD P roduct S u m m ary -100 Volt, 0 .0 8 7 a RAD H A R D H EXFET International Rectifier’s P-channel RAD HARD tech­

Contextual Info: Data Sheet No. PD-9.888 I3 R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.300, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

Contextual Info: PD - 91415C IRHM9160 IRHM93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: PD - 90888B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω ID -11A 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for

PD908

Contextual Info: PD-90889E IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

Contextual Info: IRHM9130 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55

Contextual Info: IRHM9130D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

IRHM9160

Abstract: IRHM93160 JANSF2N7425 JANSR2N7425
Contextual Info: PD - 91415F IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

IRHM9150

Abstract: IRHM93150
Contextual Info: PD - 90889B IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHM9160

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.087Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold

Contextual Info: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

H265

Abstract: TO-254AA Package H266
Contextual Info: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -1 0 0 Volt, 0.30H, RAO HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and

international rectifier NE 22

Abstract: IRHM9150 IRHM93150
Contextual Info: Provisional Data Sheet No. PD - 9.889A IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.080Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold

JANSR2N7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

Contextual Info: Preliminary Data Sheet No. PD-9.1415B International TOR Rectifier IRHM91 60 IRHM93160 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -100 Volt, 0.073£2, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

IRHM9130

Abstract: P-channel HEXFET Power MOSFET H265
Contextual Info: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -100 Volt, 0.30&, RAD HARD H EXFET In te rn atio n al R e ctttle r’s P -C hannel RAD H A R D Technology HEXFETs d e m on strate excellen t th re sh o ld voltag e s ta b ility and

IRHM9130

Abstract: IRHM93130
Contextual Info: PD - 90888A IRHM9130 IRHM93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for

Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

IRHM9150

Abstract: IRHM93150 JANSF2N7422 JANSR2N7422
Contextual Info: PD - 90889D IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω IRHM93150 300K Rads (Si) 0.080Ω

JANSR2N7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425
Contextual Info: PD - 91415E IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω ID QPL Part Number

Contextual Info: IRHM9150D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D)13 @Temp (øC)100 IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55