IRGMC50FU Search Results

Contextual Info: IRGMC50FU Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.21

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while