IRFU410 Search Results

Contextual Info: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ

IFR-410

Abstract: IFU410 IFR410 irfu410
Contextual Info: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: PD - 9.1302A International IO R Rectifier IRFR/U4105 HEXFET Power M O SFET Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^D S (o n) = 0 .0 4 5 0 lD = 28A(D

Contextual Info: IRFU410 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)1.5# I(DM) Max. (A) Pulsed I(D)1.2# @Temp (øC)100 IDM Max (@25øC Amb)3.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42# Minimum Operating Temp (øC)-55õ

Contextual Info: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: IRFR4104 IRFU4104 D VDSS = 40V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS on = 5.5mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi

irf power mosfet

Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A… S Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRFU410A Advanced Power MOSFET IRFU410A B V • Improved Inductive Ruggedness ■ Rugged Polysilicon Gate Cell Structure ■ Fast Switching Times ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Improved High Temperature Reliability

IRFR410B

Abstract: IRFU410B
Contextual Info: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ

AN-994

Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105
Contextual Info: PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching RDS(on) = 0.045Ω ID = 25A➄ Description

Contextual Info: IRFU4105 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)25# I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)46# Minimum Operating Temp (øC)-55

AN-994

Abstract: EIA-541 IRFR4105Z IRFU120 IRFU4105Z R120
Contextual Info: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

IRFR4104

Abstract: IRFU4104
Contextual Info: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5mΩ

diode MARKING CODE 18A

Abstract: IRFR4105Z IRFU4105Z b965
Contextual Info: PD - 94752 IRFR4105Z IRFU4105Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 24.5mΩ

IRFR4104

Abstract: IRFU4104
Contextual Info: PD - 95425A IRFR4104PbF IRFU4104PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V

IRFR4105Z

Abstract: IRFU4105Z 10E-06
Contextual Info: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

NTA-100

Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N
Contextual Info: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using

AN-994

Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105 U4105
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching

irfz34n equivalent

Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N
Contextual Info: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using

AN-1005

Contextual Info: PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS on = 5.5mΩ

IFR410

Abstract: IFU410 IRFU410 IFR-410 IRFR410 TB334
Contextual Info: IRFR410, IRFU410 Data Sheet July 1999 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

AN-994

Abstract: IRFR4105 IRFU4105 IRFZ34N mosfet IRFZ34N
Contextual Info: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using